Infineon Technologies
IMW120R007M1HXKSA1
SiC MOSFETs CoolSiC 1200 V, 7 mohm SiC Trench MOSFET in TO247-3 package
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- SiC MOSFETs
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
18 parameters- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Id - Continuous Drain Current
- 225 A
- Rds On - Drain-Source Resistance
- 9.9 mOhms
- Vgs - Gate-Source Voltage
- - 5 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 5.2 V
- Qg - Gate Charge
- 220 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 750 W
- Channel Mode
- Enhancement
Show more parameters (6)
- Country of Assembly
- CN
- Country of Diffusion
- AT
- Country of Origin
- AT
- Product
- MOSFETs
- Technology
- SiC
- Part # Aliases
- IMW120R007M1H SP005425447
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.