Nexperia
PMBT2227AYS-QH
Bipolar Transistors - BJT SOT363 40V .6A NPN/PNP BJT
Basic Information
View Datasheet ↗- Manufacturer
- Nexperia
- Product Category
- Bipolar Transistors - BJT
- Package
- TSSOP-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
18 parameters- Technology
- Si
- Transistor Polarity
- NPN, PNP
- Configuration
- Dual
- Maximum DC Collector Current
- 800 mA
- Collector- Emitter Voltage VCEO Max
- 40 V, 60 V
- Collector- Base Voltage VCBO
- 60 V, 75 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 1 V
- Pd - Power Dissipation
- 550 mW
- Gain Bandwidth Product fT
- 200 MHz, 300 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
Show more parameters (6)
- Qualification
- AEC-Q101
- Continuous Collector Current
- 600 mA
- Country of Origin
- MY
- DC Collector/Base Gain hfe Min
- 100 at 150 mA, 10 V
- DC Current Gain hFE Max
- 300 at 150 mA, 10 V
- Part # Aliases
- 934664622125
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.