Qorvo
TGF2160
RF JFET Transistors DC-20GHz Gain 10.4dB PAE 63% DIE
Basic Information
View Datasheet ↗- Manufacturer
- Qorvo
- Product Category
- RF JFET Transistors
- Mounting Style
- SMD/SMT
- Packaging
- Gel Pack
- RoHS
- Compliant (source record)
Technical Specifications
18 parameters- Transistor Type
- pHEMT
- Technology
- GaAs
- Gain
- 10.4 dB
- Vds - Drain-Source Breakdown Voltage
- 12 V
- Vgs - Gate-Source Breakdown Voltage
- - 7 V
- Id - Continuous Drain Current
- 517 mA
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 5.6 W
- Configuration
- Dual
- Operating Frequency
- 20 GHz
- Operating Temperature Range
- - 65 C to + 150 C
Show more parameters (6)
- Product
- RF JFET
- Type
- GaAs pHEMT
- Forward Transconductance - Min
- 619 mS
- Number of Channels
- 2 Channel
- P1dB - Compression Point
- 32.5 dBm
- Part # Aliases
- 1098617
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.