onsemi
SBC808-25LT1G
Bipolar Transistors - BJT SS GP XSTR SPCL TR
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Series
- BC808
- Package
- SOT-23-3
- Packaging
- Cut Tape
Technical Specifications
16 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Maximum DC Collector Current
- 500 mA
- Collector- Emitter Voltage VCEO Max
- 25 V
- Collector- Base Voltage VCBO
- 30 V
- Emitter- Base Voltage VEBO
- 5 V
- Pd - Power Dissipation
- 300 mW
- Gain Bandwidth Product fT
- 100 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Qualification
- AEC-Q100
Show more parameters (4)
- Country of Origin
- CN
- DC Collector/Base Gain hfe Min
- 160 at 100 mA, 1 V
- DC Current Gain hFE Max
- 160 at 100 mA, 1 V
- Unit Weight
- 0.000282 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.