ON Semiconductor / Fairchild
BD13716S
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Brand
- ON Semiconductor / Fairchild
- Product Category
- Bipolar Transistors - BJT
- Series
- BD137
- Package
- TO-126-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 0.5 V
- Maximum DC Collector Current
- 1.5 A
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 160
- Height
- 1.5 mm
- Length
- 8 mm
Show more parameters (5)
- Width
- 3.25 mm
- Continuous Collector Current
- 1.5 A
- DC Collector/Base Gain hfe Min
- 40
- Pd - Power Dissipation
- 12.5 W
- Unit Weight
- 0.026843 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.