IXYS
IXGA36N60A3
IGBT Transistors DISC IGBT PT-LOW FREQUENCY
Basic Information
View Datasheet ↗- Manufacturer
- IXYS
- Product Category
- IGBT Transistors
- Package
- TO-263AA-3
- Mounting Style
- SMD/SMT
- Packaging
- Tube
Technical Specifications
10 parameters- Technology
- Si
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 600 V
- Collector-Emitter Saturation Voltage
- 1.4 V
- Maximum Gate Emitter Voltage
- 20 V
- Continuous Collector Current at 25 C
- 200 A
- Pd - Power Dissipation
- 220 W
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Gate-Emitter Leakage Current
- 100 nA
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.