MACOM
GTVA262711FA-V2-R2
GaN FETs 300W GaN HEMT 48V 2496 to 2690MHz
Basic Information
View Datasheet ↗- Manufacturer
- MACOM
- Product Category
- GaN FETs
- Package
- H-87265J-2
- Mounting Style
- Screw Mount
- Packaging
- Reel
Technical Specifications
12 parameters- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 125 V
- Id - Continuous Drain Current
- 12 A
- Maximum Operating Temperature
- + 225 C
- Country of Origin
- US
- Gain
- 18 dB
- Maximum Operating Frequency
- 2.69 GHz
- Minimum Operating Frequency
- 2.62 GHz
- Output Power
- 300 W
- Technology
- GaN
- Transistor Type
- GaN HEMT
- Vgs - Gate-Source Breakdown Voltage
- - 10 V to 2 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.