Diodes Incorporated
ZTX718
Bipolar Transistors - BJT PNP High Gain
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Series
- ZTX718
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
18 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 20 V
- Collector- Base Voltage VCBO
- - 20 V
- Emitter- Base Voltage VEBO
- - 5 V
- Collector-Emitter Saturation Voltage
- - 190 mV
- Maximum DC Collector Current
- 2.5 A
- Gain Bandwidth Product fT
- 180 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 300 at 10 mA, 2 V
- Height
- 4.01 mm
Show more parameters (6)
- Length
- 4.77 mm
- Width
- 2.41 mm
- Continuous Collector Current
- - 2.5 A
- DC Collector/Base Gain hfe Min
- 300 at 10 mA, 2 V, 300 at 100 mA, 2 V, 150 at 2 A, 2 V, 35 at 4 A, 2 V, 15 at 6 A, 2 V
- Pd - Power Dissipation
- 1000 mW
- Unit Weight
- 0.015873 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.