onsemi
NSVT1418LT1G
Bipolar Transistors - BJT Bipolaransistor 160V
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Series
- NSVT1418L
- Package
- SOT-23-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
16 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Maximum DC Collector Current
- 1 A
- Collector- Emitter Voltage VCEO Max
- 160 V
- Collector- Base Voltage VCBO
- 180 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 100 mV
- Pd - Power Dissipation
- 420 mW
- Gain Bandwidth Product fT
- 120 MHz
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- - 1 A
Show more parameters (4)
- Country of Diffusion
- JP
- Country of Origin
- CN
- DC Collector/Base Gain hfe Min
- 100
- DC Current Gain hFE Max
- 400
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.