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NXP Semiconductors

MRF8P9300HSR6

RF MOSFET Transistors HV8-900 100W 28V NI1230HS

Basic Information

View Datasheet ↗
Manufacturer
NXP
Brand
NXP Semiconductors
Product Category
RF MOSFET Transistors
Series
MRF8P9300H
Package
NI-1230S
Mounting Style
SMD/SMT
Packaging
Reel
RoHS
Compliant (source record)

Technical Specifications

12 parameters
Transistor Polarity
N-Channel
Technology
Si
Vds - Drain-Source Breakdown Voltage
70 V
Gain
19.6 dB
Output Power
100 W
Maximum Operating Temperature
+ 150 C
Configuration
Single
Operating Frequency
0.86 GHz to 0.96 GHz
Vgs - Gate-Source Voltage
10 V
Vgs th - Gate-Source Threshold Voltage
2.3 V
Part # Aliases
935310166128
Unit Weight
0.300472 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

MRF8P9300HSR6 Specifications and Datasheet | ChipSourceHub