Central Semiconductor
2N6214
Bipolar Transistors - BJT PNP 450Vcbo 450Vcex 425Vcer 400Vceo 35W
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N62
- Package
- TO-66-2
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 400 V
- Collector- Base Voltage VCBO
- 450 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 2.5 V
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
- DC Current Gain hFE Max
- 100 at 1 A, 5 V
- Continuous Collector Current
- 2 A
- DC Collector/Base Gain hfe Min
- 10 at 1 A, 5 V
Show more parameters (2)
- Pd - Power Dissipation
- 35 W
- Part # Aliases
- 2N6214 PBFREE
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.