Infineon Technologies
BFP 196W H6327
RF Bipolar Transistors RF BIP TRANSISTOR
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- RF Bipolar Transistors
- Series
- BFP196
- Package
- SOT-343
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Type
- Bipolar
- Technology
- Si
- Transistor Polarity
- NPN
- Collector- Emitter Voltage VCEO Max
- 12 V
- Emitter- Base Voltage VEBO
- 2 V
- Continuous Collector Current
- 150 mA
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Configuration
- Single
- DC Current Gain hFE Max
- 140
- Type
- RF Bipolar Small Signal
- Gain Bandwidth Product fT
- 7.5 GHz
Show more parameters (3)
- Pd - Power Dissipation
- 700 mW
- Part # Aliases
- BFP196WH6327XT BFP196WH6327XTSA1 SP000745250
- Unit Weight
- 0.000236 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.