ROHM Semiconductor
HP8M51TB1
MOSFET 100V NCH+PCH POWER
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- MOSFET
- Package
- HSOP-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
19 parameters- Technology
- Si
- Number of Channels
- 2 Channel
- Transistor Polarity
- N-Channel, P-Channel
- Vds - Drain-Source Breakdown Voltage
- 100 V
- Id - Continuous Drain Current
- 4.5 A
- Rds On - Drain-Source Resistance
- 170 mOhms, 290 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 1 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 15 nC, 26.2 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 7 W
Show more parameters (7)
- Configuration
- Dual
- Channel Mode
- Enhancement
- Transistor Type
- 1 N-Channel, 1 P-Channel
- Fall Time
- 14 ns, 19 ns
- Rise Time
- 13 ns
- Typical Turn-Off Delay Time
- 50 ns, 75 ns
- Typical Turn-On Delay Time
- 13 ns, 15 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.