Diodes Incorporated
ZXMP6A17E6QTA
MOSFET 60V P-Ch Enh Mode 1.1W 3A 637pF 17.7nC
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- MOSFET
- Series
- ZXMN6
- Package
- SOT-26-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
21 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- P-Channel
- Vds - Drain-Source Breakdown Voltage
- 60 V
- Id - Continuous Drain Current
- 3 A
- Rds On - Drain-Source Resistance
- 120 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 1 V
- Vgs - Gate-Source Voltage
- 10 V
- Qg - Gate Charge
- 17.7 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 1.92 W
Show more parameters (9)
- Configuration
- Single
- Channel Mode
- Enhancement
- Qualification
- AEC-Q101
- Transistor Type
- 1 P-Channel
- Forward Transconductance - Min
- 4.7 S
- Fall Time
- 11.3 ns
- Rise Time
- 3.4 ns
- Typical Turn-Off Delay Time
- 26.2 ns
- Typical Turn-On Delay Time
- 2.6 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.