ON Semiconductor
NSS12500UW3T2G
Bipolar Transistors - BJT 2 2 LOW VCE(SAT) TR
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- NSS12500UW3
- Package
- WDFN-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 12 V
- Collector- Base Voltage VCBO
- - 12 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- - 200 mV
- Maximum DC Collector Current
- 5 A
- Gain Bandwidth Product fT
- 100 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Height
- 0.75 mm
- Length
- 2 mm
Show more parameters (4)
- Width
- 2 mm
- Continuous Collector Current
- - 5 A
- DC Collector/Base Gain hfe Min
- 250
- Pd - Power Dissipation
- 875 mW
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.