Vishay / Siliconix
SUM80090E-GE3
MOSFET 150V Vds 20V Vgs D2PAK (TO-263)
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay / Siliconix
- Product Category
- MOSFET
- Series
- SUM
- Package
- TO-263-3
- Mounting Style
- SMD/SMT
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
22 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 150 V
- Id - Continuous Drain Current
- 128 A
- Rds On - Drain-Source Resistance
- 7.5 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 2 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 95 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 375 W
Show more parameters (10)
- Configuration
- Single
- Channel Mode
- Enhancement
- Tradename
- TrenchFET
- Transistor Type
- 1 N-Channel
- Forward Transconductance - Min
- 52 S
- Fall Time
- 8 ns
- Rise Time
- 114 ns
- Typical Turn-Off Delay Time
- 28 ns
- Typical Turn-On Delay Time
- 15 ns
- Unit Weight
- 0.077603 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.