Central Semiconductor
2N5401
Bipolar Transistors - BJT PNP Gen Pr Amp
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N5401
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
18 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 150 V
- Collector- Base Voltage VCBO
- 160 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 0.5 V
- Maximum DC Collector Current
- 0.6 A
- Gain Bandwidth Product fT
- 300 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Height
- 5.33 mm
- Length
- 5.21 mm
Show more parameters (6)
- Width
- 4.19 mm
- Continuous Collector Current
- - 600 mA
- DC Collector/Base Gain hfe Min
- 50
- Pd - Power Dissipation
- 625 mW
- Part # Aliases
- 2N5401 PBFREE
- Unit Weight
- 0.016000 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.