Central Semiconductor
CP191V-2N2222A-CT20
Bipolar Transistors - BJT NPN 2N2222A 75Vcbo Bare die-Waffle Pack
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- Die
- Mounting Style
- SMD/SMT
- Packaging
- Waffle
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 40 V
- Collector- Base Voltage VCBO
- 75 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 1 V
- Maximum DC Collector Current
- 800 mA
- Gain Bandwidth Product fT
- 300 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 300
Show more parameters (2)
- Continuous Collector Current
- 800 mA
- DC Collector/Base Gain hfe Min
- 100
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.