Renesas / Intersil
HFA3101BZ
RF Bipolar Transistors TXARRAY NPN GILBERT CELL 8W
Basic Information
View Datasheet ↗- Manufacturer
- Renesas Electronics
- Brand
- Renesas / Intersil
- Product Category
- RF Bipolar Transistors
- Series
- HFA3101
- Package
- SOIC-8
- Mounting Style
- SMD/SMT
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
20 parameters- Transistor Type
- Bipolar
- Technology
- Si
- Transistor Polarity
- NPN
- DC Collector/Base Gain hfe Min
- 40
- Collector- Emitter Voltage VCEO Max
- 8 V
- Emitter- Base Voltage VEBO
- 5.5 V
- Continuous Collector Current
- 0.03 A
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 85 C
- Configuration
- Hex
- Collector- Base Voltage VCBO
- 12 V
- DC Current Gain hFE Max
- 40 at 10 mA at 3 V
Show more parameters (8)
- Height
- 1.5 mm (Max)
- Length
- 5 mm (Max)
- Operating Frequency
- 10000 MHz (Typ)
- Type
- RF Bipolar Small Signal
- Width
- 4 mm (Max)
- Gain Bandwidth Product fT
- 10000 MHz (Typ)
- Maximum DC Collector Current
- 0.03 A
- Unit Weight
- 0.002540 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.