Microchip Technology
2N5012
Bipolar Transistors - BJT Power BJT
Basic Information
View Datasheet ↗- Manufacturer
- Microchip
- Brand
- Microchip Technology
- Product Category
- Bipolar Transistors - BJT
- Package
- TO-5-3
- Mounting Style
- Through Hole
- RoHS
- Not compliant (source record)
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 200 mA
- Collector- Emitter Voltage VCEO Max
- 700 V
- Collector- Base Voltage VCBO
- 700 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 1.6 V
- Pd - Power Dissipation
- 1 W
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
- Country of Origin
- PH
Show more parameters (2)
- DC Collector/Base Gain hfe Min
- 30 at 25 mA, 10 V
- DC Current Gain hFE Max
- 180 at 25 mA, 10 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.