ON Semiconductor
MJE4343G
Bipolar Transistors - BJT 16A 160V 125W NPN
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- MJE4343
- Package
- TO-247-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 160 V
- Collector- Base Voltage VCBO
- 160 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 3.5 V
- Maximum DC Collector Current
- 16 A
- Gain Bandwidth Product fT
- 1 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Height
- 16.2 - 4 mm (Max)
- Length
- 15.2 mm (Max)
Show more parameters (5)
- Width
- 4.9 mm (Max)
- Continuous Collector Current
- 16 A
- DC Collector/Base Gain hfe Min
- 15
- Pd - Power Dissipation
- 125 W
- Unit Weight
- 0.229281 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.