Diodes Incorporated
BC846BLP4-7B
Bipolar Transistors - BJT 65V NPN Small Sig 80V 65V 100mA
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Series
- BC846
- Package
- X2-DFN1006-3
- Mounting Style
- SMD/SMT
- Packaging
- Single
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 65 V
- Collector- Base Voltage VCBO
- 80 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 220 mV
- Maximum DC Collector Current
- 0.2 A
- Pd - Power Dissipation
- 1 W
- Gain Bandwidth Product fT
- 300 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 450 at 2 mA, 5 V
Show more parameters (3)
- Technology
- Si
- Continuous Collector Current
- 0.2 A
- DC Collector/Base Gain hfe Min
- 200 at 2 mA, 5 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.