Infineon Technologies
FS100R12KT4G
IGBT Modules N-CH 1.2KV 100A
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- IGBT Modules
- Package
- Econo 3
- Mounting Style
- Chassis Mount
- Packaging
- Tray
Technical Specifications
17 parameters- Product
- IGBT Silicon Modules
- Configuration
- Hex
- Collector- Emitter Voltage VCEO Max
- 1200 V
- Collector-Emitter Saturation Voltage
- 2.2 V
- Continuous Collector Current at 25 C
- 100 A
- Gate-Emitter Leakage Current
- 100 nA
- Pd - Power Dissipation
- 515 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Height
- 17 mm
- Length
- 122 mm
- Technology
- Si
Show more parameters (5)
- Width
- 62 mm
- Maximum Gate Emitter Voltage
- 20 V
- Tradename
- TRENCHSTOP
- Part # Aliases
- FS100R12KT4GBOSA1 SP000379671
- Unit Weight
- 10.582189 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.