Microchip / Microsemi
JANSR2N3810U/TR
Bipolar Transistors - BJT 60V 50mA 350mW Dual RH Small-Signal BJT SQ SMT TR
Basic Information
View Datasheet ↗- Manufacturer
- Microchip
- Brand
- Microchip / Microsemi
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N3810
- Package
- LCC-6
- Mounting Style
- SMD/SMT
- Packaging
- Reel
- RoHS
- Not compliant (source record)
Technical Specifications
13 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Dual
- Maximum DC Collector Current
- 50 mA
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 200 mV
- Pd - Power Dissipation
- 350 mW
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
- DC Collector/Base Gain hfe Min
- 100 at 10 uA, 5 V
Show more parameters (1)
- DC Current Gain hFE Max
- 450 at 100 uA, 5 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.