STMicroelectronics
STP18NM80
MOSFET N-channel 800 V MDMesh
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- MOSFET
- Series
- STP18NM80
- Package
- TO-220-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
19 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 800 V
- Id - Continuous Drain Current
- 17 A
- Rds On - Drain-Source Resistance
- 295 mOhms
- Vgs - Gate-Source Voltage
- 30 V
- Qg - Gate Charge
- 70 nC
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 190 W
- Configuration
- Single
Show more parameters (7)
- Tradename
- MDmesh
- Transistor Type
- 1 N-Channel
- Fall Time
- 50 ns
- Rise Time
- 28 ns
- Typical Turn-Off Delay Time
- 96 ns
- Typical Turn-On Delay Time
- 18 ns
- Unit Weight
- 0.011640 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.