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IXYS

IXFH16N50P3

MOSFET Polar3 HiPerFET Power MOSFET

Basic Information

View Datasheet ↗
Manufacturer
IXYS
Product Category
MOSFET
Series
IXFH16N50
Package
TO-247-3
Mounting Style
Through Hole
Packaging
Tube

Technical Specifications

10 parameters
Technology
Si
Number of Channels
1 Channel
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
500 V
Id - Continuous Drain Current
16 A
Rds On - Drain-Source Resistance
360 mOhms
Configuration
Single
Tradename
HiPerFET
Transistor Type
1 N-Channel
Unit Weight
0.056438 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

IXFH16N50P3 Specifications and Datasheet | ChipSourceHub