ChipSourceHub

Nexperia

PBSS4032PZ,115

Bipolar Transistors - BJT Single PNP -30V -4.4A 700mW 130MHz

Basic Information

View Datasheet ↗
Manufacturer
Nexperia
Product Category
Bipolar Transistors - BJT
Package
SOT-223-3
Mounting Style
SMD/SMT
Packaging
Reel
RoHS
Compliant (source record)

Technical Specifications

14 parameters
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
- 30 V
Collector- Base Voltage VCBO
- 30 V
Emitter- Base Voltage VEBO
- 5 V
Collector-Emitter Saturation Voltage
- 270 mV
Maximum DC Collector Current
- 4.4 A
Gain Bandwidth Product fT
130 MHz
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
- 4.4 A
DC Collector/Base Gain hfe Min
200
Pd - Power Dissipation
700 mW
Show more parameters (2)
Qualification
AEC-Q101
Unit Weight
0.003951 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

PBSS4032PZ,115 Specifications and Datasheet | ChipSourceHub