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Ampleon

BLF647PSJ

RF MOSFET Transistors Broadband pwr LDMOS transistor

Basic Information

View Datasheet ↗
Manufacturer
Ampleon
Product Category
RF MOSFET Transistors
Package
SOT1121B-5
Mounting Style
SMD/SMT
Packaging
Reel

Technical Specifications

14 parameters
Transistor Polarity
Dual N-Channel
Technology
LDMOS
Vds - Drain-Source Breakdown Voltage
65 V
Rds On - Drain-Source Resistance
140 mOhms
Operating Frequency
1.5 GHz
Gain
17.5 dB
Output Power
200 W
Maximum Operating Temperature
+ 225 C
Country of Origin
PH
Number of Channels
2 Channel
Vgs - Gate-Source Voltage
- 500 mV, + 11 V
Vgs th - Gate-Source Threshold Voltage
2.25 V
Show more parameters (2)
Part # Aliases
934066857118
Unit Weight
0.106657 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

BLF647PSJ Specifications and Datasheet | ChipSourceHub