Vishay Semiconductors
SISS46DN-T1-GE3
MOSFETs 100V Vds 20V Vgs PowerPAK 1212-8S
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay Semiconductors
- Product Category
- MOSFETs
- Series
- SISS
- Package
- PowerPAK-1212-8S
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
23 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 100 V
- Id - Continuous Drain Current
- 45.3 A
- Rds On - Drain-Source Resistance
- 12.8 mOhms
- Vgs - Gate-Source Voltage
- - 20 V, 20 V
- Vgs th - Gate-Source Threshold Voltage
- 2 V
- Qg - Gate Charge
- 42 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 65.7 W
Show more parameters (11)
- Channel Mode
- Enhancement
- Tradename
- TrenchFET, PowerPAK
- Configuration
- Single
- Country of Origin
- CN
- Fall Time
- 6 ns
- Forward Transconductance - Min
- 50 S
- Rise Time
- 6 ns
- Transistor Type
- 1 N-Channel TrenchFET Power MOSFET
- Typical Turn-Off Delay Time
- 21 ns
- Typical Turn-On Delay Time
- 12 ns
- Unit Weight
- 0.017231 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.