ON Semiconductor
NSS12501UW3T2G
Bipolar Transistors - BJT LO V NPN TRANSISTOR 12V 7.0A
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- NSS12501UW3
- Package
- WDFN-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 12 V
- Collector- Base Voltage VCBO
- 12 V
- Emitter- Base Voltage VEBO
- 6 V
- Maximum DC Collector Current
- 5 A
- Gain Bandwidth Product fT
- 150 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Height
- 0.75 mm
- Length
- 2 mm
- Width
- 2 mm
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 200
- Pd - Power Dissipation
- 1500 mW
- Unit Weight
- 0.000339 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.