ROHM Semiconductor
2SCR544RHZGTL
Bipolar Transistors - BJT NPN, SOT-346T, 80V 2.5A, Driver Transistor
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT-346T-3
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 80 V
- Collector- Base Voltage VCBO
- 80 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 100 mV
- Pd - Power Dissipation
- 1 W
- Gain Bandwidth Product fT
- 28 MHz
- Maximum Operating Temperature
- + 150 C
- Qualification
- AEC-Q101
- Country of Origin
- TH
Show more parameters (2)
- DC Collector/Base Gain hfe Min
- 120
- DC Current Gain hFE Max
- 390
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.