Microchip Technology
ARF466BG
RF MOSFET Transistors RF MOSFET (VDMOS) 1000 V 300 W 45 MHz TO-264
Basic Information
View Datasheet ↗- Manufacturer
- Microchip
- Brand
- Microchip Technology
- Product Category
- RF MOSFET Transistors
- Package
- TO-247-3
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
18 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Id - Continuous Drain Current
- 13 A
- Vds - Drain-Source Breakdown Voltage
- 1 kV
- Rds On - Drain-Source Resistance
- 1 Ohms
- Operating Frequency
- 45 MHz
- Gain
- 16 dB
- Output Power
- 300 W
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Country of Origin
- PH
- Forward Transconductance - Min
- 3.3 mS
Show more parameters (6)
- Number of Channels
- 1 Channel
- Pd - Power Dissipation
- 357 W
- Type
- RF Power MOSFET
- Vgs - Gate-Source Voltage
- + 30 V
- Vgs th - Gate-Source Threshold Voltage
- 4 V
- Unit Weight
- 1.340411 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.