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ON Semiconductor

NVD6415ANT4G-VF01

MOSFET NFET DPAK 100V 23A 55MOHM

Basic Information

View Datasheet ↗
Manufacturer
ON Semiconductor
Product Category
MOSFET
Package
DPAK-3
Mounting Style
SMD/SMT
Packaging
Reel
RoHS
Compliant (source record)

Technical Specifications

20 parameters
Technology
Si
Number of Channels
1 Channel
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
100 V
Id - Continuous Drain Current
23 A
Rds On - Drain-Source Resistance
55 mOhms
Vgs th - Gate-Source Threshold Voltage
2 V
Vgs - Gate-Source Voltage
20 V
Qg - Gate Charge
29 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
83 W
Show more parameters (8)
Configuration
Single
Channel Mode
Enhancement
Qualification
AEC-Q101
Forward Transconductance - Min
13 S
Fall Time
37 ns
Rise Time
37 ns
Typical Turn-Off Delay Time
30 ns
Typical Turn-On Delay Time
10 ns

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

NVD6415ANT4G-VF01 Specifications and Datasheet | ChipSourceHub