Taiwan Semiconductor
TSM600NA25CIT C0G
MOSFETs 250V, 22A, Single, N-Channel Low Voltage MOSFETs
Basic Information
View Datasheet ↗- Manufacturer
- Taiwan Semiconductor
- Product Category
- MOSFETs
- Package
- ITO-220TL-3
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
23 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 250 V
- Id - Continuous Drain Current
- 22 A
- Rds On - Drain-Source Resistance
- 60 mOhms
- Vgs - Gate-Source Voltage
- - 30 V, 30 V
- Vgs th - Gate-Source Threshold Voltage
- 4.2 V
- Qg - Gate Charge
- 71 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 78 W
Show more parameters (11)
- Channel Mode
- Enhancement
- Qualification
- AEC-Q101
- Configuration
- Single
- Country of Origin
- TW
- Fall Time
- 25 ns
- Rise Time
- 16 ns
- Transistor Type
- 1 N-Channel
- Typical Turn-Off Delay Time
- 78 ns
- Typical Turn-On Delay Time
- 16 ns
- Part # Aliases
- TSM600NA25CIT
- Unit Weight
- 0.055874 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.