ON Semiconductor / Fairchild
KSD2012GTU
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Brand
- ON Semiconductor / Fairchild
- Product Category
- Bipolar Transistors - BJT
- Series
- KSD2012
- Package
- TO-220F-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 0.4 V
- Maximum DC Collector Current
- 3 A
- Gain Bandwidth Product fT
- 3 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 320
- Height
- 9.19 mm
Show more parameters (5)
- Length
- 10.16 mm
- Width
- 4.7 mm
- Continuous Collector Current
- 3 A
- Pd - Power Dissipation
- 25 W
- Unit Weight
- 0.080072 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.