ROHM Semiconductor
2SCR564F3TR
Bipolar Transistors - BJT NPN 4A 80V MID-PWR TRANS
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- DFN-2020-3S-3
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 80 V
- Collector- Base Voltage VCBO
- 80 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 300 mV
- Pd - Power Dissipation
- 2.1 W
- Gain Bandwidth Product fT
- 280 MHz
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 4 A
- Country of Origin
- JP
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 120 at 500mA, 3 V
- DC Current Gain hFE Max
- 390 at 500mA, 3 V
- Part # Aliases
- 2SCR564F3
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.