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Toshiba

3SK291(TE85L,F)

RF MOSFET Transistors N-Ch High Freq 30mA 0.15W 12.5V

Basic Information

View Datasheet ↗
Manufacturer
Toshiba
Product Category
RF MOSFET Transistors
Series
3SK291
Package
SOT-24-4
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

10 parameters
Transistor Polarity
N-Channel
Technology
Si
Id - Continuous Drain Current
30 mA
Vds - Drain-Source Breakdown Voltage
12.5 V
Gain
22.5 dB
Configuration
Dual
Operating Frequency
800 MHz
Type
RF Small Signal MOSFET
Pd - Power Dissipation
150 mW
Unit Weight
0.000459 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

3SK291(TE85L,F) Specifications and Datasheet | ChipSourceHub