Toshiba
2SK2009TE85LF
MOSFET N-Ch Sm Sig FET Id 0.2A 30V 20V
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- MOSFET
- Series
- 2SK2009
- Package
- SOT-346-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
20 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Id - Continuous Drain Current
- 200 mA
- Rds On - Drain-Source Resistance
- 2 Ohms
- Vgs th - Gate-Source Threshold Voltage
- 500 mV
- Vgs - Gate-Source Voltage
- 2.5 V
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 200 mW
- Configuration
- Single
- Channel Mode
- Enhancement
Show more parameters (8)
- Height
- 1.1 mm
- Length
- 2.9 mm
- Transistor Type
- 1 N-Channel
- Type
- RF Small Signal MOSFET
- Width
- 1.5 mm
- Typical Turn-Off Delay Time
- 0.12 us
- Typical Turn-On Delay Time
- 0.06 us
- Unit Weight
- 0.000423 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.