ROHM Semiconductor
2SAR523UBTL
Bipolar Transistors - BJT GP Amplification Trans
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SAR523UB
- Package
- UMT-3
- Mounting Style
- SMD/SMT
- Packaging
- Single
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 50 V
- Collector- Base Voltage VCBO
- - 50 V
- Emitter- Base Voltage VEBO
- - 5 V
- Collector-Emitter Saturation Voltage
- - 0.15 V
- Gain Bandwidth Product fT
- 300 MHz
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 560
- Continuous Collector Current
- - 100 mA
- DC Collector/Base Gain hfe Min
- 120
- Pd - Power Dissipation
- 200 mW
Show more parameters (1)
- Part # Aliases
- 2SAR523UB
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.