ON Semiconductor / Fairchild
FQA11N90C-F109
MOSFET 900V N-Ch Q-FET advance C-Series
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Brand
- ON Semiconductor / Fairchild
- Product Category
- MOSFET
- Series
- FQA11N90C_F109
- Package
- TO-3PN-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
23 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 900 V
- Id - Continuous Drain Current
- 11 A
- Rds On - Drain-Source Resistance
- 1.4 Ohms
- Vgs - Gate-Source Voltage
- 30 V
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 300 W
- Configuration
- Single
- Channel Mode
- Enhancement
Show more parameters (11)
- Tradename
- QFET
- Height
- 20.1 mm
- Length
- 16.2 mm
- Transistor Type
- 1 N-Channel
- Width
- 5 mm
- Fall Time
- 85 ns
- Rise Time
- 130 ns
- Typical Turn-Off Delay Time
- 130 ns
- Typical Turn-On Delay Time
- 60 ns
- Part # Aliases
- FQA11N90C_F109
- Unit Weight
- 0.225789 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.