Nexperia
PBHV2160ZX
Bipolar Transistors - BJT 0.1A NPN High- Voltage Transistor
Basic Information
View Datasheet ↗- Manufacturer
- Nexperia
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT-223-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 600 V
- Collector- Base Voltage VCBO
- 600 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 65 mV
- Maximum DC Collector Current
- 100 mA
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 125 at 10 mA, 10 V
- Continuous Collector Current
- 100 mA
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 70 at 10 mA, 10 V
- Pd - Power Dissipation
- 1.4 W
- Unit Weight
- 0.003951 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.