Toshiba
2SK3079ATE12LQ
RF MOSFET Transistors N-Ch Radio Freq 3A 20W 10V VDSS
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- RF MOSFET Transistors
- Series
- 2SK3079
- Package
- PW-X-4
- Mounting Style
- SMD/SMT
- Packaging
- Reel
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Id - Continuous Drain Current
- 3 A
- Vds - Drain-Source Breakdown Voltage
- 10 V
- Gain
- 13.5 dB
- Output Power
- 2.2 W
- Configuration
- Single
- Operating Frequency
- 470 MHz
- Type
- RF Power MOSFET
- Pd - Power Dissipation
- 20 W
- Vgs - Gate-Source Voltage
- 3 V
- Vgs th - Gate-Source Threshold Voltage
- 0.8 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.