Renesas / Intersil
HFA3134IHZ96
RF Bipolar Transistors W/ANNEAL TXARRAY 2X NPN MATCHED INDE
Basic Information
View Datasheet ↗- Manufacturer
- Renesas Electronics
- Brand
- Renesas / Intersil
- Product Category
- RF Bipolar Transistors
- Series
- HFA3134
- Package
- SOT-23
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
21 parameters- Transistor Type
- Bipolar
- Technology
- Si
- Transistor Polarity
- NPN
- DC Collector/Base Gain hfe Min
- 48
- Collector- Emitter Voltage VCEO Max
- 11 V
- Emitter- Base Voltage VEBO
- 4.5 V
- Continuous Collector Current
- 0.026 A
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 85 C
- Configuration
- Dual
- Collector- Base Voltage VCBO
- 12 V
- DC Current Gain hFE Max
- 48 at 10 mA at 2 V, 48 at 1 mA at 2 V, 48 at 0.1 mA at 2 V, 48 at 10 mA at 5 V, 48 at 1 mA at 5 V, 48 at 0.1 mA at 5 V
Show more parameters (9)
- Height
- 1.15 mm
- Length
- 2.9 mm
- Operating Frequency
- 8500 MHz (Typ)
- Type
- RF Bipolar Small Signal
- Width
- 1.6 mm
- Gain Bandwidth Product fT
- 8500 MHz (Typ)
- Maximum DC Collector Current
- 0.026 A
- Moisture Sensitive
- Yes
- Unit Weight
- 0.000635 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.