ROHM Semiconductor
2SD1963T100R
Bipolar Transistors - BJT NPN 20V 3A
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 20 V
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 6 V
- Maximum DC Collector Current
- 3 A
- Gain Bandwidth Product fT
- 150 MHz
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 180 at 500 mA, 2 V
- Height
- 1.5 mm
- Length
- 4.5 mm
- Width
- 2.5 mm
Show more parameters (4)
- Continuous Collector Current
- 3 A
- DC Collector/Base Gain hfe Min
- 180
- Pd - Power Dissipation
- 2000 mW
- Unit Weight
- 0.004603 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.