Wolfspeed / Cree
CGHV59350F
RF JFET Transistors GaN HEMT 5.2-5.9GHz, 350 Watt
Basic Information
View Datasheet ↗- Manufacturer
- Cree, Inc.
- Brand
- Wolfspeed / Cree
- Product Category
- RF JFET Transistors
- Mounting Style
- SMD/SMT
- Packaging
- Tray
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Type
- HEMT
- Technology
- GaN
- Gain
- 11 dB
- Vds - Drain-Source Breakdown Voltage
- 125 V
- Vgs - Gate-Source Breakdown Voltage
- - 10 V, 2 V
- Output Power
- 450 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 85 C
- Height
- 5.03 mm
- Length
- 24.26 mm
- Operating Frequency
- 5900 MHz
- Operating Temperature Range
- - 40 C to + 85 C
Show more parameters (4)
- Product
- C-Band Radar HEMT
- Width
- 23.01 mm
- Number of Channels
- 1 Channel
- Vgs th - Gate-Source Threshold Voltage
- - 3 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.