Infineon Technologies
FF6MR12W2M1HB70BPSA1
MOSFET Modules CoolSiC MOSFET half-bridge module 1200 V
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- MOSFET Modules
- Series
- M1H
- Package
- 106.4 mm x 61.4 mm x 30.5 mm
- Mounting Style
- Screw Mount
- Packaging
- Tray
Technical Specifications
20 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Id - Continuous Drain Current
- 200 A
- Rds On - Drain-Source Resistance
- 5.63 mOhms
- Vgs - Gate-Source Voltage
- - 10 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 5.55 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 20 mW
- Configuration
- Dual
- Country of Origin
- AT
Show more parameters (8)
- Fall Time
- 30 ns
- Rise Time
- 18.7 ns
- Tradename
- EasyDUAL CoolSiC
- Type
- Half Bridge
- Typical Turn-Off Delay Time
- 62.6 ns
- Typical Turn-On Delay Time
- 20.4 ns
- Vf - Forward Voltage
- 5.65 V
- Part # Aliases
- FF6MR12W2M1H_B70 SP005634617
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.