Texas Instruments
TPS1100D
MOSFET MOSFET 10ns RT
Basic Information
View Datasheet ↗- Manufacturer
- Texas Instruments
- Product Category
- MOSFET
- Series
- TPS1100
- Package
- SOIC-8
- Mounting Style
- SMD/SMT
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
24 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- P-Channel
- Vds - Drain-Source Breakdown Voltage
- 15 V
- Id - Continuous Drain Current
- 1.6 A
- Rds On - Drain-Source Resistance
- 180 mOhms
- Vgs - Gate-Source Voltage
- 15 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 85 C
- Pd - Power Dissipation
- 791 mW
- Configuration
- Single
- Channel Mode
- Enhancement
Show more parameters (12)
- Height
- 1.75 mm
- Length
- 4.9 mm
- Product
- MOSFET Small Signal
- Transistor Type
- 1 P-Channel
- Type
- MOSFET
- Width
- 3.9 mm
- Forward Transconductance - Min
- 2.5 S
- Fall Time
- 10 ns
- Rise Time
- 10 ns
- Typical Turn-Off Delay Time
- 13 ns
- Typical Turn-On Delay Time
- 4.5 ns
- Unit Weight
- 0.002677 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.