Microchip / Microsemi
2N3740A
Bipolar Transistors - BJT Power BJT
Basic Information
View Datasheet ↗- Manufacturer
- Microchip
- Brand
- Microchip / Microsemi
- Product Category
- Bipolar Transistors - BJT
- Package
- TO-66-2
- Mounting Style
- Through Hole
- Packaging
- Tray
- RoHS
- Not compliant (source record)
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 600 V
- Maximum DC Collector Current
- 10 A
- Gain Bandwidth Product fT
- 3 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
- DC Current Gain hFE Max
- 100 at 250 mA, 1 VDC
Show more parameters (3)
- Continuous Collector Current
- 4 A
- DC Collector/Base Gain hfe Min
- 30 at 250 mA, 1 VDC
- Pd - Power Dissipation
- 25 W
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.