ROHM Semiconductor
2SC5659T2LN
Bipolar Transistors - BJT NPN 25V 50MA
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SC5659
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 25 V
- Collector- Base Voltage VCBO
- 40 V
- Emitter- Base Voltage VEBO
- 5 V
- Maximum DC Collector Current
- 0.05 A
- Gain Bandwidth Product fT
- 300 MHz
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 56 at 1 mA, 6 V
- Height
- 0.5 mm
- Length
- 1.2 mm
- Width
- 0.8 mm
Show more parameters (2)
- DC Collector/Base Gain hfe Min
- 56
- Pd - Power Dissipation
- 150 mW
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.