Toshiba
TTA008B,Q
Bipolar Transistors - BJT PWR TRANS TO-126 PC=10W F=1M
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Series
- TTA008B
- Package
- TO-126N-3
- Mounting Style
- Through Hole
- Packaging
- Tray
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 80 V
- Collector- Base Voltage VCBO
- - 80 V
- Emitter- Base Voltage VEBO
- - 7 V
- Collector-Emitter Saturation Voltage
- - 0.3 V
- Maximum DC Collector Current
- - 4 A
- Pd - Power Dissipation
- 1.5 W
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 200
- Technology
- Si
Show more parameters (2)
- Continuous Collector Current
- - 2 A
- DC Collector/Base Gain hfe Min
- 100
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.